| 摘要 |
PURPOSE:To widen spectral sensitivity and to improve sensitivity by forming a carrier transfer layer of a conductive org. compd. and a carrier generating layer of hydrogenated amorphous silicon contg. nitrogen and boron. CONSTITUTION:The layer (a-SiN:H) obtd. by introducing the nitrogen and boron simultaneously into the hydrogenated amorphous silicon is formed as the carrier generating layer and the org. conductive material is then formed on the carrier generating layer. The carriers are, therefore, generated at quantum efficiency 1 at a short wavelength. The band gap is slightly widened and the top ends of the valence bands of the a-SiN:H and the org. conductive material of the carrier transfer layer can be matched by incorporating N into said layer; therefore, the hole implantation efficiency to the carrier transfer layer is improved. The spectral sensitivity is thereby widened and the sensitivity is improved. |
