发明名称 POLYSILANE POSITIVE PHOTORESIST MATERIALS AND METHODS FOR THEIR USE
摘要 <p>POLYSILANE POSITIVE PHOTORESIST MATERIALS AND METHODS FOR THEIR USE New polysilane COPOLYMERS comprise recurring units of -Si(X)(Y)- and Si(A)(B))-, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.</p>
申请公布号 CA1230444(A) 申请公布日期 1987.12.15
申请号 CA19850476525 申请日期 1985.03.14
申请人 UNITED STATES OF AMERICA (GOVERNMENT OF THE) AS REPRESENTED BY TH 发明人 HARRAH, LARRY A.;ZEIGLER, JOHN M.
分类号 G03F7/26;C08G77/00;C08G77/48;C08G77/60;G03C5/00;G03F7/038;G03F7/039;G03F7/075;G03F7/36;H01L21/30;(IPC1-7):C08G77/60 主分类号 G03F7/26
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