| 摘要 |
PURPOSE:To enable the removal of useless films sticking to all the constituent parts in a vacuum vessel by placing an auxiliary electrode so as to easily generate low temp. plasma even at a position at which low temp. plasma is hardly generated by conventional plasma cleaning. CONSTITUTION:This plasma CVD apparatus is composed essentially of a vacuum vessel 41, an evacuating means 49, a pressure controlling means 51, a gas feeding means, a means 43 of holding a body to be processed, a main electrode 46, an auxiliary electrode 52, and a means 53 of supplying high frequency electric power to the electrode 52. When high frequency electric power is supplied to the main electrode 46, the electrode 46 generates low temp. plasma in the space in the vacuum vessel 41 including the body 42 to be processed in a prescribed pressure state. The auxiliary electrode 52 is placed at a proper position in the vessel 41 and removes a deposit sticking to the constituent parts in the vessel 41 by low temp. plasma.
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