| 摘要 |
<p>PURPOSE:To contrive simplification of judgement of the accuracy in positioning when an alignment work is performed by a method wherein one of the positioning marks on the side of a wafer and on the side of a mask is formed into repetitive patterns of equal intervals, and the other positioning mark is formed into the pattern having a vernier function against the above-mentioned pattern. CONSTITUTION:Positioning marks 1 and 2 shown by hatching are formed by performing photoetching on the surface of a semiconductor wafer. As the positioning mark 3 on the side of a photo mask, which will be brought into line with said positioning marks 1 and 2, has an X-type pattern at the center point, the positioning of the center point can be performed. Besides, a parallel section 31, with which the mark 1 on the side of a wafer is pinched from the upper and the lower sides, is extended from the tip of said X-type pattern, and a vernier 4, having the dimensions with a fixed quantity of bias is applied to the pitch of the mark 1 on the side of the wafer, is formed on either of the upper and the lower parts of said parallel section 31. When the marks 1 and 2 and the marks 3 are positioned, the positional deviation can be judged easily by visual observation using said vernier 4, and an alignment operation can be performed efficiently.</p> |
