| 摘要 |
PURPOSE:To obtain an image sensor characterized by a broad bandwidth and excellent efficiency, by providing electrodes in an insulating film on a substrate, and providing a semiconductor crystal film, which is provided on the insulating film and becomes a light receiving region. CONSTITUTION:A semiconductor single crystal film, which is to become a light receiving region, is formed on electrodes. Light 303, which is projected from an upper part on a device, is incident directly on the semiconductor crystal film 4, and optically excited electric charge is generated. Then the electric charge is made to sweep as follows: at one time, a specified potential is imparted to the electrodes 101 and 102 and 104 and 105; then a specified potential is imparted to only the electrodes 102 and 105; at the next time, a specified potential is imparted to the electrodes 102 and 103 and 105 and 106; and these operations are repeated. Thus the potential well is moved, and the optically excited electric charge can be made to sweep. In this way, the incident light can be directly inputted without passing a material such as the electrodes, and the image sensor characterized by excellent efficiency can be obtained. |
