| 摘要 |
PURPOSE:To prevent any semiconductor product from adhering to inner wall of a cover body by a method wherein the second heating means is provided on the outer surface of cover body. CONSTITUTION:When semiconductor manufacturing gas is fed to a reaction chamber 4 with the ceiling thereof closed from a gas feeder 3 to form films of semiconductor device on silicon wafers 2, any not yet reacted semiconductor manufacturing gas in the reaction chamber 4 is exhausted through an exhaust port 5. A heating program 10 decided by the conductivity and growth rate of the film of outer heater 9 is fed to a sequencer 11 to be controlled so that the reactive temperature of semiconductor manufacturing gas may be specified by gradually raising the temperature of outer heater 9 in propertion to the film thickness to form a fine thin film adhering to the inner wall of ceiling 1 in the reaction chamber 4. Through these procedures, any powdery film adhering to the inner wall of ceiling in the reaction chamber 4 can be excluded.
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