| 摘要 |
PURPOSE:To stabilize the connection between an n-type silicon interconnection and an aluminum interconnection, by providing the n-type silicon interconnection, to which the aluminum interconnection is connected, on the upper surface of a connecting part, and providing a highly doped n-type silicon layer, which is contacted with the lower surface of the connecting part. CONSTITUTION:An aluminum interconnection 5 is contacted with the upper surface of a connecting part 7, and an n-type silicon interconnection 3 is provided in a semiconductor device. A highly doped n-type silicon layer 9, which is contacted with the lower surface of the connecting part 7, is provided in the semiconductor device. The highly doped n-type silicon layer 9, which is contacted with the lower surface of the connecting part 7, is formed before the formation of the silicon interconnection 3. Therefore, n-type impurities are supplied to the connecting part 7 from the n-type silicon layer 9 by heating before the formation of the aluminum interconnection 5, and the impurity concentration becomes high. The formation of a P-type silicon region, which is a problem, is prevented. Thus, the connection of the aluminum interconnection and the n-type silicon interconnection can be stabilized.
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