| 摘要 |
PURPOSE:To make it possible to measure the temperature distribution of semiconductor wafers at the time of ion implantation, by measuring implantation temperature, which has specified relationship with a carrier recovery rate that is obtained from the sheet resistances of the low-temperature annealed wafer and the high-temperature annealed wafer, in which ions are implanted under the same conditions. CONSTITUTION:Two semiconductor wafers, in which ions are implanted under the same conditions, are prepared. Both wafers undergo low-and hightemperature annealings. Thus, the low-temperature annealed wafer and the high-temperature annealed wafer are provided. The sheet resistances of both wafers are measured. Based on the sheet resistance value of the high-temperature annealed wafer, the sheet resistance value and a carrier recovery rate of the low-temperature annealed wafer are obtained. Based on the obtained carrier recovery rate, implantation temperature, which has specified relationship with said carrier recovery rate, is measured. Thus, the distribution state of the implantation temperature can be readily measured.
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