| 摘要 |
PURPOSE:To improve the dielectric strength between a first interconnection layer and a second interconnection layer, by connecting the first interconnection layer through a high concentration impurity region, which is provided at the bottom and the side surface of an isolating island, and arranging the second interconnection layer on a thick field insulating film, which is formed on the upper surface of the isolating island. CONSTITUTION:A dielectric isolating island 11' is divided into a plurality of islands by isolating and insulating films 14. A high impurity concentration region 13, which has the same conductivity type as that of the isolating island, in this case an N<+> embedded layer, is formed on the bottom surface and the side surface of each dielectric isolating island 11'. The region 13 connects one first electrode interconnection layer 18 and another first electrode interconnection layer 19 by way of electrode lead-out ports 17, which are formed in a surface insulating film 16 on the upper surface of a semiconductor element 10. The element 10 includes a plurality of the dielectric isolating islands 11'. A second electrode interconnection layer 20 is arranged on the upper surface of a surface insulating film 15 with respect to the first electrode interconnection layer 18. Thus, the insulating film, which is present in both parts in a region, where two interconnection layers are intersected, can be made sufficiently thick. The dielectric strength between the two interconnection layers is improved.
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