| 摘要 |
PURPOSE:To decrease contact resistance and to secure current capacity sufficiently, by performing anisotropic etching at the contact part of electrode wiring on the surface of a semiconductor substrate, and thereafter depositing wiring metal. CONSTITUTION:Anisotropic etching is performed at the contact surface of an N-type silicon substrate 1 and wiring metal before a metallic thin film is deposited. As anisotropic etching liquid, liquid, in which hydrazine hydrate (NH2NH2.H2O), isopropyl alcohol and pure water are mixed at a ratio of 60:6:22, is used. The silicon substrate 1 is etched for 10 seconds at a liquid temperature of 10 deg.C. Then not only a natural oxide film at a surface 10 (111) on the surface of the substrate is removed, but also regular-tetrahedron shaped etch pits 8 shown in the Figure are evenly formed. In this way, an electrode wiring having low contact resistance can be formed, by forming the etch pits in the contact part of the electrode wiring on the surface of the semiconductor substrate by the anisotropic etching and by increasing the contact area of the substrate and the wiring metal.
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