| 摘要 |
PURPOSE:To obtain a semiconductor laser, which is oscillated at a low threshold value in a basic lateral mode, by forming an active layer on the side surface of a first clad layer, forming an active region, thereby controlling the width of the active region only by the thickness of crystal growth in the first clad layer. CONSTITUTION:On an N-InP clad layer 12, an SiO2 film 13 is formed by a CVD method and the like. The SiO2 film on an InP substrate 10 is removed. A GaInAsP active layer 14 is grown on the slant side surface of the N-InP clad layer 12, where the SiO2 film is not present, on the side of the exposed surface of the InP substrate. The layer 14 is also grown on the exposed surface of the InP substrate. A P-InP clad layer 15, which is the second clad layer, is grown on the GaInP active layer 14. The SiO2 film 13 on the N-InP clad layer 12 is removed. A negative N-type electrode 17 is evaporated on the removed part. A positive P-type electrode 18 is evaporated on the P-InP clad layer 15. Then, a semiconductor laser element is obtained. Thus, low threshold current value oscillation and basic lateral mode oscillation can be carried out.
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