| 摘要 |
PURPOSE:To contrive increase in thin film forming speed without coating oil and the like by a method wherein an ultraviolet ray transmitting window is moved to the etching chamber coupled to a reaction chamber, and the reaction product formed on the ultraviolet ray transmitting window is removed in the etching chamber. CONSTITUTION:The substrate 3 set on a substrate supporting member 6 is put in a reaction chamber 1, the substrate is heated up using a heater 2, and after the reaction chamber has been evacuated, thin film forming gas is introduced, an ultraviolet ray source 5 is lighted up, and ultraviolet rays are made to irradiate through a transmitting window 8. Subsequently, after reactive gas has been evacuated, a sluice valve 9 is opened, the transmission window 8 is moved to an etching chamber 10, and after the sluice valve 7 has been closed, etching gas is introduced, high frequency power is applied, and the reaction product on the transmission window is removed by plasma etching. Then, the sluice valve is opened again, the trnsmission window is returned to the reaction chamber, and after the sluice valve has been closed, thin film forming gas is introduced again, and a thin film is formed again using a CVD method.
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