发明名称 PLASMA TREATMENT APPARATUS
摘要 PURPOSE:To realize low damage plasma treatment without being influenced by charged particles created by 1st and 2nd plasma generating means and resolve the problem of degradation of activeness by providing both the plasma generating means outside a reaction chamber. CONSTITUTION:A substrate 2 to be treated is housed in the reaction chamber 1 of a plasma treatment apparatus and quasi-stable active species created by 1st plasma generating part 5 linked with a gas storage part 3 are introduced into the reaction chamber 1. After reactive gas from a gas storage part 7 is subjected to preliminary decomposition or to activation through a valve 8 and 2nd plasma generating part 9, the reactive gas is introduced into the reaction chamber 1. Both the generating parts 5 and 9 are provided outside the reaction chamber 1. The life of the active species of the generating part 5 is selected to be longer than 10 ms and one of rare gas, nitrogen and oxygen is employed as the gas for creating the active species. With this constitution, low damage plasma treatment can be realized without being influenced by charged particles created by both the creating parts 5 and 9.
申请公布号 JPS62285424(A) 申请公布日期 1987.12.11
申请号 JP19860127910 申请日期 1986.06.04
申请人 HITACHI LTD 发明人 TSUJII KANJI;YAJIMA YUSUKE;MURAYAMA SEIICHI
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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