| 摘要 |
PURPOSE:To implant ions uniformly over a whole surface, by using a deflector to deflect an ion beam not yet accelerated by an accelerator, making the ion beam parallel, and using the accelerator to accelerate the ion beam subjected to parallel scanning, to radiate the ion beam onto an ion-implanted substrate. CONSTITUTION:An ion beam 14 emitted from an ion beam generator 13 comprising an ion generator 11 and a mass analysis magnet 12 is deflected horizontally and vertically within a prescribed range of angle by a deflector 18 comprising a four-pole electrostatic lens 15, an electron confining magnet 16 and a deflection means such as a mutually-facing flat plate deflector 17, and is made a parallel beam by a paralleling means such as a unipotential electrostatic lens 19. After that, the parallelized ion beam 14 is accelerated by an accelerator 20 so that an ion-implanted substrate such as a semiconductor wafer 22 held on a platen 21 is irradiated with the ion beam at a prescribed irradiation angle and thus scanned.
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