| 摘要 |
PURPOSE:To prevent the dispersion of a resistance value and the disconnection of a poly Si resistance element by surrounding the whole or one part of the element by an insulating layer, through which H2 is not passed, and a semi- insulating poly Si layer. CONSTITUTION:Semi-insulating poly Si 12 containing O is deposited on an Si substrate 10 through a layer insulating film 11. Connecting holes 12a, 11a are bored, and a thin-film 1 as a poly Si resistance element is laminated. A mask is executed and the element film l and the semi-insulating layer 12 are etched, and the surface is coated with an SiN layer 13. According to the constitution, the SiN layer prevents the intrusion of H, the instability of a resistance value by H and trouble (disconnection, etc.,) to the increase of resistance by the thin-film are removed, thus acquiring the resistance element having reliability. |
