| 摘要 |
PURPOSE:To prevent the occurrence of uneven revolution by using a chemically strengthened glass as at least one base so as to reduce the weight. CONSTITUTION:A reflection type conductor base 3' and a transparent chemically strengthened glass base 3 are used. The one reflecting conductor base 3' has ruggedness. For example, only the region of a recording track 27 remains selectively to the base 3' having the large reflectance made of a metal such as an aluminum or its alloy to provide ruggedness. The base 3' has a recess (guide track) 26 and a projection recording track 27. The other base 3 is made flat, its thickness is selected as 0.7-0.2mm, preferably 0.3mm, an electrode 4-1 made of a transparent conductive film is formed on the base 3 by, e.g., indium oxide tint and a blocking layer 4-2 is formed by the plasma CVD method for the silicon semiconductor in the thickness of nearly 100Angstrom by silane (SinH2n+2n>=2) to form the electrode 4. An FTL5 is formed on one upper face. That is, a 1st dielectric thin film 5-1, e.g., silicon nitride 5-2 is formed on the upper face of the electrode 4. |
