| 摘要 |
PURPOSE:To impart sufficient sensitivity in the long wavelength region of semiconductor laser beams by forming a microcrystalline phase containing impurity atoms ranging to parts of both lower barrier layer an a potential maintaining layer or all the parts of both layers so as to cover the junction of both. CONSTITUTION:The microcrystalline phase 6 is formed across both of the P<+> type lower barrier layer 2 and the pi type potential maintaining layer 3 so as to cover the junction of both layers. The semiconductor laser beams having an about 800nm wavelength region are sufficiently absorbed by the phase 6, and a large amount of electrons and positive holes. Since electric field intensities both toward the side of a conductive substrate 1 and the side of the layer 4 are maintained both maximum, generated electrons flow toward the surface of the layer 4, and generated positive holes flow toward the side of the conductive substrate 1 both at high speed, and they recombine in the layer 3 or the layer 4, thus permitting the parts irradiated with light to be rendered to almost 0 potential, and maintained at the almost initial potential in the dark, and consequently, light response speed, dark decay resistance characteristics, and sensitivity to the semiconductor laser beams to be enhanced. |
