| 摘要 |
PURPOSE:To inhibit a short channel effect, and to apply an electric field in the direction of a channel effectively by forming a groove, a bored hole or the like to one part of a conductive layer held by oppositely faced ohmic electrodes. CONSTITUTION:A buffer layer 3, conductive layers 4, 5, etc. are laminated onto a semiconductor insulating substrate 2, and ohmic electrodes 7, 8 are arranged oppositely onto the layer 5. A groove is shaped in parallel with a channel layer 14 in the layer 5, and a gate electrode 16 is formed through photoetching, etc. through the groove, thus shaping a GaAsFET, etc., under the state in which three directions of the layer 14 are surrounded by the electrode 16. When voltage is applied from the main surface of the layer 5 and side surfaces forming a specified angle with the main surface of the layer 5, electrons are confined at the center of a channel region in the groove, and the two-dimensional effect of the electric field of the channel layer and the diffusion of carriers are inhibited while an electric field in the channel direction can be applied effectively, thus improving the transfer efficiency of electrons. Accordingly, a short channel effect is suppressed, and the velocity of electrons is increased and drain currents and mutual conductance characteristics are enhanced.
|
