| 摘要 |
PURPOSE:To slide the central portion of a basic pattern at the time of the second exposure from the position of the central portion at the first time and thereby to give a final basic pattern substantially the same high precision with that of a designed pattern, by dividing an electron beam (EB) exposure into two steps and by reducing an amount of the first EB exposure. CONSTITUTION:The first of electron beam (EB) exposures of a designed pattern (a) based on a submicron pattern is conducted by means of a basic pattern (divided pattern). The second exposure is conducted at a position a 1/2 pitch off the one of the basic pattern at the first and the width of the pattern at that time is made slightly smaller than that at the first time. A nodal portion formed at a joint portion of each basic pattern at the first time is compensated with the central portion of the joint portion of each basic pattern at the second time, sinuosity and excessive thickness are thereby eliminated, and thus a final basic pattern is made substantially the same with the designed pattern.
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