| 摘要 |
PURPOSE:To add iron-group atoms to a semiconductor crystal of an indium compound containing phosphorus atoms, by providing a reaction tube with a first reaction chamber into which a gas of an iron-group element is introduced and a second reaction chamber into which a gas of the indium compound containing phosphorus atoms is introduced, and by moving a substrate alternately between the reaction chambers. CONSTITUTION:The high-temperature area 3 of a reaction tube 1 of a semiconductor crystal manufacturing apparatus is partitioned in to upper and lower sides with a partition, and an FeCl2 gas of iron group atoms is introduced into a first reaction chamber 6 formed on the upper side from a gas introduction pipe 7. Moreover, a boat 10 holding an In metal 9 is disposed in a second reaction chamber 8 formed on the lower side, and a mixed gas of H2 and MCl3 is introduced thereinto from a gas introduction pipe 16. Besides, a mixed gas of H2 and HCl is introduced into a reaction tube 13 joined to the introduction pipe 7 and having a boat 12 holding iron 11. A substrate 18 is set on the low-temperature area 4 of the reaction tube 1, and a substrate holder 17 is moved alternately between the reaction chambers 6 and 8 so as to add iron-group atoms to a semiconductor crystal of an indium compound containing phosphorus atoms.
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