| 摘要 |
PURPOSE:To eliminate the need for the etching of a dielectric substrate, and to obtain a surface light-emitting laser enabling narrow spectral oscillations by forming the surface light-emitting semiconductor laser onto the substrate transparent to an oscillation wavelength and working the substrate as an external resonator. CONSTITUTION: An N-type Al0.3Ga0.7As clad layer 2, a GaAs optical active layer 3, a P-type Al0.3Ga0.7As clad layer 4 and a P-type Al0.15Ga0.85 As cap layer 5 are shaped onto a dielectric substrate (crystal substrate of BaTiO3) 1, both surfaces of which are mirror-polished, through an MOCVD method. An SiO2 current blocking layer 6, an Au/Zn/Au electrode 7 and an Au/Sn electrode 8 are formed onto these layers through a vacuum deposition method. The surface 10, on which no semiconductor layer is shaped, of the substrate 1 and the surface 9 of the cap layer 5 function as the main resonance surfaces of a laser. Forward currents are injected between the electrodes 7, 8, thus acquiring the resonance of the surface light-emitting laser at a single longitudinal mode. |
