发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To obtain a high output by one outgoing beams while acquiring a laser having high reliability by forming a high reflection film to one part of a laser outgoing end-surface. CONSTITUTION:Normal double hetero-structure is grown on a GaAs substrate, to which five groove stripes are shaped, through a liquid growth method. High reflection films 9 are executed to outgoing end surfaces in second and fourth light-emitting striped regions from the left, and laser lights are not emitted from the regions. Consequently, laser lights, 360 deg. phase of which is conformed, are emitted from first, third and fifth stripes from the left. Accordingly, laser lights are intensified mutually in the direction vertical from the outgoing end surfaces, thus forming outgoing beams to one single peak.
申请公布号 JPS62285483(A) 申请公布日期 1987.12.11
申请号 JP19860127920 申请日期 1986.06.04
申请人 HITACHI LTD 发明人 UOMI KAZUHISA;YOSHIZAWA MISUZU;KAJIMURA TAKASHI;KONO TOSHIHIRO;SASAKI YOSHIMITSU
分类号 H01S5/00 主分类号 H01S5/00
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