| 摘要 |
PURPOSE:To attain a bubble memory element having a wider bias margin and easy bubble transmission by providing a projection to a conductor pattern boundary in a cross part between a conductor pattern of the magnetic bubble memory element and a bubble transfer pattern to relax the potential distribution. CONSTITUTION:The projection 20 projected in the bubble progressing direction whose tip is converged is provided at the boundary of exit from the cross part of the conductor pattern 3 to the non-cross part viewed from the bubble transmission direction in the cross part between the conductor pattern 3 and the bubble transfer pattern 2 and the boundary profile of the bubble transfer pattern 2 is prolonged while crossing nearly the center of the projection 20. By providing the projection whose tip is converged and prolonged in the bubble transmission direction in this way to the cross part of the conductor pattern, the potential distribution of a barrier is relaxed in comparison with the cross parts nearly orthogonal to each other, resulting in that the bubble is transmitted easily and the transmission characteristic is improved remarkably.
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