Tunn film av ett amorft magnetiskt material och förfarande för framstä llning av denna

摘要

This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.