| 摘要 |
PURPOSE:To increase the responding speed of a thin film semiconductor device by forming a multilayered film having different content rates of crystal components and order degrees of amorphous components by a plasma CVD method, and altering the amorphous component to crystal components. CONSTITUTION:A glass substrate is held at 400 deg.C, a layer 2 including fine crystal component and amorphous component is deposited by a plasma CVD method with monosilane gas diluted with hydrogen as a material, only hydrogen is introduced into a reaction furnace, and cooled to 300 deg.C. The monosilane is again fed to deposit a layer of only the amorphous component, and a semiconductor film is formed by repeating the operation three times. Then, a reaction furnace is set to 1 atm with nitrogen, a substrate temperature is set to 580 deg.C, and the amorphous layer of three layers is converted to crystal component 2a. After this film is island-photoetched, an SiO2 film is deposited. Then, an N<+> type layer is deposited while doping a phosphine, phosphorus is ion implanted to form a source, drain region after photoetching, and activated by heat treating. Then, PSG and aluminum are deposited, ITO is deposited, and TN type lquid crystal is sealed between another glass substrate deposited with ITO and the ITO. Thus, a semiconductor layer having high responding speed is obtained. |
