| 摘要 |
PURPOSE:To improve the load shortcircuit resistance of a conductive modulation type MOSFET by forming the channel length of a channel region formed on a base layer interposed between a source layer and a high resistance layer directly under a gate electrode, the width of the gate electrode and the width of the high resistance layer interposed between a drain layer and the base layer in specific sizes, respectively. CONSTITUTION:A high resistance layer 13 is formed through a buffer layer 12 on a drain layer 11, and a gate electrode 15 is formed by a polycrystalline silicon film through a gate insulating film 14 on the layer 13. The electrode 15 is formed in a lattice shape having a stripelike gap 16. With the electrode 15 as a mask an impurity is diffused to form a base layer 17 and a source layer 18, and a channel region 19 is formed on the layer 17 interposed between the layers 18 and 13. In such a structure, a channel length l is set to 5.5mum, a gate electrode length LG is set to 30mum or longer, and the width Wn of the layer 13 is set to 120mum or longer. Thus, a latchup current can be increased without raising an ON voltage by the optimum design of an element parameter. |
