| 摘要 |
PURPOSE:To accelerate the operating speed of a semiconductor memory by providing an impurity regin surface on one main surface of a semiconductor substrate, providing an ohmically bonded electrode on one end of the region, a Schottky junction electrode on the other end, and a Schottky junction electrode between both the electrodes, and containing a plurality of memory cells. CONSTITUTION:A current of 50-200mA flows between a wiring electrode 12 and an ohmic electrode 16 to write a memory cell, and the electrode 12 is buried in a semiconductor substrate 10 by heat generated at that time. After writing, a depletion layer 15 of a region in which the electrode is buried is introduced to the end of an impurity region 13, a current passage between a reading electrode 11 and an ohmic eleotrode 16 is interrupted, thereby becoming a high resistance writing state. The memory cell is read by applying a current of approx. 1 mA from a reading bit line 22a with a word line 23a or 23b as a ground potential. At this time, a potential corresponding to writing or reading state is generated at the reading bit line 22a. Thus, the wiring width of the bit line is reduced to increase the operating speed. |
