发明名称 |
Process for producing positive patterns in a photoresist layer. |
摘要 |
<p>The process involves the following stages: (a) covering a substrate with a layer of photosensitive resin consisting of a polymer carrying functional groups (preferably phenolic) mixed with or bound to a photosensitive crosslinking agent such as a bis-arylazide; (b) exposure of the layer to visible or ultraviolet light through a mask; (c) treatment of the layer by a silicon compound (e.g. hexamethyldisilazane) and (d) dry development by plasma engraving (e.g. an oxygen plasma) to remove the irradiated parts of the layer. The silicon compound diffuses selectively into the non-irradiated parts of the layer and is fixed in these parts: through the dry engraving, a mask of silicon oxide is formed which protects the parts not irradiated during this operation. Application to the production of integrated circuits.</p> |
申请公布号 |
EP0248779(A1) |
申请公布日期 |
1987.12.09 |
申请号 |
EP19870870061 |
申请日期 |
1987.05.06 |
申请人 |
U C B |
发明人 |
ROLAND, BRUNO;VRANCKEN, AUGUST |
分类号 |
G03F7/008;G03F7/26;G03F7/30;G03F7/36;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/008 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|