MAGNETIC BUBBLE MEMORY ELEMENT

摘要

PURPOSE:To quantitatively grasp the formation of a hyper-fine pattern by providing a comb-line pattern in which a pattern width is successively changed in the space part of a memory chip. CONSTITUTION:The comb-line pattern CP is provided with the comb-line pattern CP1 which has the plural wedge shape patterns CPA integrally shaped that have acute angles at the end part and the pattern width W in a body part and a gap (g) substantially orthogonal with respect to a short shape wedge shape pattern main body CPB and a rectangular reference pattern CP2 substantially parallel to the main body CPB and formed with a constant distance separated from and oppositely to the end side of the plural patterns CPA. The distance l between the CP1 and the CP2 is measured and read. Thereby, the formation of the permalloy transfer path P can be quantitatively grasped.