发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
摘要 A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate surface and having a gentle slope facing the first gentle slope; an optical semiconductor element is constructed using the single crystalline layer. An electronic semiconductor element is constructed using the substrate surface. A wiring layer connects electrodes of the optical semiconductor element and the electronic semiconductor element through the first and the second gentle slopes.
申请公布号 EP0162677(A3) 申请公布日期 1987.12.09
申请号 EP19850303488 申请日期 1985.05.17
申请人 FUJITSU LIMITED 发明人 WADA, OSAMU;SANADA, TATSUYUKI;MIURA, SHUICHI;MACHIDA, HIDEKI;YAMAKOSHI, SHIGENOBU;SAKURAI, TERUO
分类号 H01L21/263;H01L21/308;H01L21/8252;H01L23/528;H01L27/144;H01L27/15;H01S5/026;(IPC1-7):H01L21/00;H01L21/82 主分类号 H01L21/263
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