发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate surface and having a gentle slope facing the first gentle slope; an optical semiconductor element is constructed using the single crystalline layer. An electronic semiconductor element is constructed using the substrate surface. A wiring layer connects electrodes of the optical semiconductor element and the electronic semiconductor element through the first and the second gentle slopes. |
申请公布号 |
EP0162677(A3) |
申请公布日期 |
1987.12.09 |
申请号 |
EP19850303488 |
申请日期 |
1985.05.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
WADA, OSAMU;SANADA, TATSUYUKI;MIURA, SHUICHI;MACHIDA, HIDEKI;YAMAKOSHI, SHIGENOBU;SAKURAI, TERUO |
分类号 |
H01L21/263;H01L21/308;H01L21/8252;H01L23/528;H01L27/144;H01L27/15;H01S5/026;(IPC1-7):H01L21/00;H01L21/82 |
主分类号 |
H01L21/263 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|