Plasma surface treatment method and apparatus.

摘要

The object of this invention is to provide a plasma surface treatment method and apparatus permitting the treatment of a film with plasma with a high treatment speed and a high efficiency without uselessly complicating the construction of a device for realizing it. In order to achieve this object, this invention is characterized in that the area where the counter electrode (ll) is in contact with the plasma is sufficiently larger than the area where the rotating electrode (8) is in contact therewith. The ratio of the areas is preferably not smaller than l.5. According to this invention it becomes possible to increase the etching speed to a value more than ten times as great as that obtained by a prior art method.