| 摘要 |
<p>PURPOSE:To secure the high performance of a display picture element electrode and then facilitate the formation of an inorganic protection film by forming a metallic film on display picture element electrodes on the 1st substrate before the formation of the inorganic protection film. CONSTITUTION:A gate electrode 25 is formed firstly on the 1st substrate 24, an insulating layer 26 is deposited on this gate electrode 25, and then amorphous silicon hydride is deposited to form a semiconductor layer 27. On the insulating layer 26 including this semiconductor layer 27, ITO 28 and molybdenum 29, for example, are deposited in order and etched in a specific shape to form display picture electrodes 21. Then, aluminum, for example, is deposited on the insulating layer 26 including the display picture element electrodes 21 and semiconductor layer 27 and further etched to form a drain electrode 30 united with a data line (Yj) and a source electrode 32 united with a display picture element electrode 21 across the semiconductor 27.</p> |
