Field-effect transistor having a delta-doped ohmic contact.

摘要

A field-effect transistor is created on a GaAs semi-insulating substrate (e.g. 100) using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of delta-doped monolayers (e.g. 111, 112, 113, 114, 115) are grown over the surface of the upper undoped layer (e.g. 103) interleaved with layers of GaAs (e.g. 121, 122, 123, 124, 125) having a thickness equal to or less than the tunneling width of electrons in GaAs. A channel (e.g. 127) is etched through the plurality of delta-doped monolayers to permit a gate electrode (e.g. 131) to contact the upper undoped GaAs layer. Source and drain electrode (e.g. 132 and 133)s are deposited over the delta-doped monolayers on each side of the channel.