发明名称 RAPID HEATING AND COOLING DEVICE FOR SEMICONDUCTOR WAFER TREATMENT
摘要 PURPOSE:To rapidly heat up or cool down wafers as well as to maintain the wafers at a uniform temperature by a method wherein two infrared ray lamps, orthogonally intersecting with each other opposing to a pair of bell jars, are arranged and two nozzles to be used for blowing of cooling gas, crossing at right angle with each other, are provided on one surface and other surface of the wafer arranged in a chamber. CONSTITUTION:When infrared ray lamps 71 and 72 are lighted up, as a chamber 3 has a short distance between the upper and the lower sides and the infrared lamps 71 and 72 are arranged in close vicinity to the upper and the lower sides of a wafer 5, the wafer is heated up quickly. Also, as the infrared ray lamps 71 and 72 are arranged at right angle with each other, the wafer 5 can be heated up to a uniform temperature on the whole surface, and also the temperature distribution of the wafer 5 can be controlled two-dimensionally by regulating the power applied to the infrared ray lamps 71 and 72. When a cooling control device 14 is operated and the cooling gas such as helium and the like is blown against the upper and the lower surfaces of the wafer from nozzles 61 and 62, the whole surface of the wafer 5 can be cooled uniformly, because the nozzles 61 and 62 are crossed at right angle with each other.
申请公布号 JPS62282437(A) 申请公布日期 1987.12.08
申请号 JP19860124727 申请日期 1986.05.31
申请人 SHINKU RIKO KK 发明人 ICHIHASHI MASAHIKO
分类号 H01L21/26;H01L21/22;H01L21/324 主分类号 H01L21/26
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