| 摘要 |
A low resistance silicon conductor for tunnelling under an intervening metal conductor on a semiconductor device is provided. The low resistance conductor includes two layers of highly doped single crystalline or polycrystalline silicon which are stacked so that one is directly over the other. A pair of metal conductors are arranged, one on each side of the intervening metal conductor. Each of the pair of metal conductors is formed in ohmic contact with a portion of each of the two layers of silicon near one of their adjacent edges, thereby forming a two layer conductive tunnel under the intervening metal conductor.
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