发明名称 Analog switch
摘要 The source and drain of a first depletion-mode MESFET (DFET) define the controlled current path of a switch, the switch being open or closed depending on whether the gate-to-source voltage (Vgs) for the first DFET is greater or less than the pinch-off voltage (Vp) for the first DFET. The first DFET has its gate connected to a first circuit node. A second DFET, connected as a source follower, has its gate connected to the source of the first DFET. A first diode has its anode connected to the first circuit node and its cathode connected to a second circuit node. A second diode has its cathode connected to the second circuit node and its a node connected to the source of the second DFET. At least one additional diode is connected anti-parallel to the first diode between the first and second nodes. A constant current source draws current either through the first diode or through the additional diode(s) in dependence upon the state of a control signal applied to a current steering network connected across the first diode.
申请公布号 US4712025(A) 申请公布日期 1987.12.08
申请号 US19850727483 申请日期 1985.04.26
申请人 TRIQUINT SEMICONDUCTOR, INC. 发明人 WEISS, FREDERICK G.
分类号 H03K17/687;H03K17/041;H03K17/16;(IPC1-7):H03K17/16 主分类号 H03K17/687
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