| 摘要 |
A process of fabricating a semiconductor device, comprising preparing a semiconductor substrate having a conductor layer formed on a surface thereof, the conductor layer having a step portion over the surface of the semiconductor substrate, forming a layer of polysilicon having a portion overlying the step portion of the conductor layer, and thermally oxidating the polysilicon layer for forming a polysilicon oxide layer having a portion substantially resulting from the portion of the polysilicon layer, the portion of the polysilicon oxide layer being thicker than another portion of the polysilicon oxide layer and becoming thinner away from the step portion of the conductor layer.
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