发明名称 |
Tailorable infrared sensing device with strain layer superlattice structure |
摘要 |
An infrared photodetector is formed of a heavily doped p-type GexSi1-x/Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.
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申请公布号 |
US4711857(A) |
申请公布日期 |
1987.12.08 |
申请号 |
US19860901114 |
申请日期 |
1986.08.28 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
CHENG, LI-JEN |
分类号 |
H01L31/0352;H01L31/101;(IPC1-7):H01L31/04;H01L29/12;H01L31/06 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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