| 摘要 |
PURPOSE:To manufacture a semiconductor laser wherein the transmitting angles or positions of laser beams can be switched by a method wherein electrodes to impress voltage in the forward direction of light are provided while the light amplification factor in the forward direction conforming to the polarity of voltage impressed on the electrode is increased to pick up the light in the direction. CONSTITUTION:When current is supplied, light is led along the current supplied region by a gain waveguide to oscillate layer beams in omnireflection mode along the part immediately below an electrode 16. The light Al advancing clockwise is transmitted from the transmitting surface 18 in the A2 direction while the light Bl advancing counterclockwise is transmitted in the B2 direction. When voltage impressing electrodes 17a, 176 are impressed with voltage making 17a plus to 17b, the gain in clockwise light Al exceeds the gain in counterclockwise light B1 to start the laser oscillation in the clockwise light A1. Resultantly, the light is transmitted in the A2 direction, however, when the polarity of voltage impressed on the electrodes 17a, 17b is reversed, the light is transmitted in the B2 direction. In other words, the transmitting direction of laser beams can be switched by changing the polarity of voltage impressed on the voltage impressing electrodes l7a, l7b. |
