| 摘要 |
PURPOSE:To prevent an interconnecting Al film from being disconnected and besides realize secure electrical connection of the Al film to a Si substrate by forming a conductive film and a high-melting-point metallic film, which are excellent in step coverage, both on an insulating film and in contact holes and then forming the insulating film and the semiconductor film only in the contact holes, and suchlike. CONSTITUTION:Conductive films 8 and 9 having excellent step coverage are formed both on an insulating film 4 and in contact holes of the insulating film 4 so that they are extensively in contact with a surface of a semiconductor substrate, with a high-melting-point metallic film 10 piled thereon. The second insulating film is then formed both only in the said contact holes and on the said high-melting-point metallic film 10. Besides, semiconductor films 12 are formed to bury the recessed parts of the contact holes, on the second insulating film inside the contact holes. A barrier metallic film 13 is then formed on both the said semiconductor films 12 and high- melting-point metallic film 10. Thereon, an interconnecting metallic film 14 is formed to compose laminated interconnections in company of the said conductive films 8 and 9, the high-melting-point metallic film 10, and the barrier metallic film 13. The said conductive films 8 and 9, the semiconductor films 12, for example, are made of polycrystal Si.
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