| 摘要 |
PURPOSE:To obtain a semiconductor device such as a bipolar transistor, which is operated at high speed and has high withstanding voltage and the longitudinal size of an element of which can be minimized, by forming a region electrically connected to a single crystal or polycrystalline semiconductor layer only to the peripheral section of the surface of a projecting type single crystal semiconductor layer. CONSTITUTION:A first insulating film 7 with an opening section is shaped onto the surface of a semiconductor substrate 1, and a first region 3 in a first single crystal semiconductor layer is formed onto the opening section. Second insulating films 77 are shaped on the side surfaces of the first region 3, and second single crystal or polycrystalline semiconductor layers 6 adjacent to the second insulating film 77 and being in contact on the surface of the first region 3 only in a predetermined region on the inside of the second insulating film 77 are formed onto said first insulating film 7. Insulator layers 8 are shaped adjacent to the second single crystal or polycrystalline semiconductor layers 6. Accordingly, the spaces of first conductivity type regions 14 connected to the single crystal or polycrystalline semiconductor layers 6 and a second conductivity type buried layer 2 in high concentration can be widened, and capacitance between a base 4 and a collector 3 in a bipolar-transistor can be reduced and working speed can be increased. The withstanding voltage of the transistor can also be improved.
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