| 摘要 |
PURPOSE:To prevent the disconnection of an Al film as a wiring while the Al wire and an Si substrate are electrically connected positively by forming a conductive film on the side wall and bottom of a contact hole, burying a recessed section with fillers and shaping a metallic film for the wiring connected at the end section of the conductive film onto the recessed section. CONSTITUTION:Conductive films 8, 9 are formed on the side walls and bottoms of contact holes in an insulating film 4 are shaped so as to be brought into contact with the surface of a semiconductor substrate 1, and fillers 10 burying recessed sections as the contact holes are formed onto the conductive films 8, 9. A metallic film 11 for wirings connected at the end sections of the conductive films 8, 9 is shaped onto said conductive films 8, 9, fillers 10 and insulating film 4. Impurity-doped polycrystalline Si films or silicide films are used as said conductive films 8, 9, SiO2 films or PSG films or the like are employed as said fillers 10, and an l film is used as said metallic film 11 for the wirings.
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