MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make possible a control of depth and inside form of etch-pits without increasing additional processes by forming a photoresist pattern comprising patterns of pits or grooves which are partially different in depth, thereby using a mask having patterns where transmittance of lights is controlled and also by etching the surface of bed film or substrate through the photoresist pattern. CONSTITUTION:A photoresist pattern 3a having partially different pits or grooves 6a-6c in depth is formed by using a mask for forming patterns comprising light and shade patterns 4 which are located at a portion of transparent substrate 5 and are able to control light transmittance and the pattern having partially different pits or grooves in depth is replicated on the surface of bed film 2 or substrate 1 by etching the surface of bed film 2 or substrate 1 through the photoresist pattern 3a. For example, a thick insulated film 2 comprising polyimide resin is formed on the substrate 1 and a photoresist film 3 is prepared on the above film 2. The photoresist film 3 is exposed through a mask where the patterns 4 comprising Cr are formed at lower face of a transparent glass plate 5 and after that, it is developed. the etching for the polyimide resin film 2 of bed film is carried out through the photoresist pattern 3a according to a dry etching process.