| 摘要 |
PURPOSE:To make a rare earth metal oxide monocrystal thin film having not only a thermal expansion coefficient which is less than twice as large as that of semiconductor materials but also a large dielectric constant perform epitaxial growth on a semiconductor monocrystal base by forming the rare earth metal oxide monocrystal thin film through a fluoride thin film on h.3 semiconductor substrate. CONSTITUTION:A fluoride thin film 11 is formed on a semiconductor monocrystal base 12 having a crystal structure consisting of a diemond or cubic ZnS structure and a metal oxide monocrystal thin film 10 having a C-rare earth or hexagonal rare earth crystal structure is formed on the above base 12 by epitaxial growth. For example, a thin oxide film is formed on the surface of a si (100) monocrystal substrate 2 after cleaning its surface and then, the substrate 2 is put in a vacuum evaporation device 1. After that, its device 1 is exhausted of the air and the oxide film on the surface is removed after raising a temperature of substrate 2 up to 900 deg.C. Subsequently, e CaF2 thin film 11 is formed after reducing the temperature of the substrate 2 up to 560 deg.C and also evaporating CaF2 kept in a vapor deposition source chest B and then, oxygen is introduced into the vacuum evaporation device 1. Under these situations, the thin film 10 of Eu2O3 is formed after evaporating a metal Eu by using a tantalum filament 6.
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