| 摘要 |
PURPOSE:To enable the high output operation to be performed by a method wherein a window structure to be N type at high concentration near the end of a resonator of an active layer and P type at high concentration in the other regions is formed by solid-diffusion of P type impurity diffused from a P type photoconductive layer as a diffusion source. CONSTITUTION:Zn is diffused to a P type Al0.25Ga0.75As photoconductive layer 5 passing through a contact layer 7 and an N type Al0.50Ga0.50As clad layer 6 from a part of SiO2 film removed by diffusion using closed pipe systwn such as vacuum sealing diffusion etc. In such a diffusion process, Zn is solid-diffused from the P type Al0.25Ga0.75As photoconductive layer 5 in high concentration through a P type Al0.50 Ga0.50As clad layer 4 in low concentration finally reaching an N type Al0.15Ga0.85As active layer 3 to reverse the conductivity type of active layer to P type. Then, N electrode 11 and P electrode 12 are formed respectively on the substrate side of wafer and the surface side. Through these procedures, a photoconductive layer with high refractive index can be formed through the intermediary of thin clad layers so that a semiconductor laser device capable of high output operation may be manufactured by solid-diffusion of P type impurity diffused from the P type photoconductive layer as a diffusion source.
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