| 摘要 |
PURPOSE:To prevent etching onto a substrate, and to obviate the disconnection of a gate electrode by conducting the etching removal of a mask used for changing a channel forming region into a thin-film together with the formation of an insulating layer consisting of a fluid insulator formed onto the whole surface. CONSTITUTION:An insular semiconductor layer 22 is shaped onto an insulating substrate 21, and a channel forming region 25 in the semiconductor layer 22 is changed into a thin-film by employing a predetermined mask 23. A fluid insulator 26 is applied onto the whole surface, an insulating layer 27 having an approximately flat surface is formed, and the insulating layer 27 is sintered. The insulating layer 27 sintered until at least the channel forming region 25 is exposed and the mask 23 are removed, and a gate electrode 30 is shaped in the channel forming region 25 exposed. The layer 22 such as a polycrystalline Si layer 22 is etched, employing the mask 23 such as an SiO2 layer 23 as a mask, and the channel forming region 25 is turned into the thin-film. The insulator 26 such as SOG 26 is applied onto the whole surface and the insulating layer 27 having an approximately flat surface is formed, and the insulating layer 27 is sintered at approximately 1000 deg.C. The channel forming region 25 is exposed through the whole-surface etching, and the gate electrode 30 is formed through a gate insulating film 29 consisting of SiO2.
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