| 摘要 |
PURPOSE:To contrive accomplishment of formation of high density of a memory device by a method wherein a read-out transistor is composed of a source and drain region, provided at a part of the control gate formed covering a floating gate, and a floating gate. CONSTITUTION:When electrons are being injected to a floating gate 3, the channel part 10 of a read-out transistor TR is inverted by the electric charge of said floating gate 3, and a current runs to the channel part 10, if potential difference is added between a bit wire and a word wire. Accordingly, a binary information can be memorized by detecting the above-mentioned current. Therefore, as a part of the control gate 7, which constitutes write-in transistor TR, constitutes the read-out transistor TR, both writing-in and read-out transistors can be arranged three-dimensionally, the area of a memory cell can be reduced to about one half, and the formation of high density memory storage can also be accomplished. |
