| 摘要 |
PURPOSE:To simplify pretreatment and post-treatment and to carry out accurate partial plating by setting a mask screening partially the surface of a substrate as the cathode and by prescribing the distance between the mask and the surface of the substrate at the edge of the screened part and current density. CONSTITUTION:A mask M screening partially the surface of a substrate as the cathode C is set. The distance (d) between the mask M and the surface of the substrate at the edge of the screened part is regulated to <=5mm. Metallic Cr is partially electrodeposited at <=25A/dm<2> cathode current density. Thus, accurate partial plating is carried out and the pretreatment and post-treatment of a product to be plated are simplified.
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