发明名称 RESIST MATERIAL AND PATTERN FORMING METHOD
摘要 PURPOSE:To obtain the resist composition which has a strong dry-etching resisting property and is suitable for two layer resisting method by using the resist material composed of a specific styrene polymer as the material of the resist layer. CONSTITUTION:The resist material composed of the styrene polymer shown by formula is used for the material of the resist layer. In the dry-etching using oxygen, as the etching resisting property and the silicon content of the material to be etched have a strong mutual relation, the more the silicon content increases, the more the etching resisting property is strengthened. However, as the styrene polymer contains two silicon atoms per the constituting unit the silicon content in the polymer is increased, the troubles about etching may be remarkably reduced.
申请公布号 JPS62280840(A) 申请公布日期 1987.12.05
申请号 JP19860126592 申请日期 1986.05.30
申请人 NEC CORP 发明人 WATANABE FUMITAKE
分类号 G03F7/038;G03F7/075;H01L21/027 主分类号 G03F7/038
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