| 摘要 |
PURPOSE:To improve the characteristics of a deposited film and the film forming rate by forming C and Si layers on the inner wall surface of an active species transport zone, and then heating the layers with the discharge plasma of a specified gas when a non-single crystal Si-contg. film is formed by separately introducing two kinds of active species into a film forming space. CONSTITUTION:A C layer or an SiC layer is formed on the inner walls of ducts 116 and 124 by a hot CVD method. A film forming chamber 101, activation chambers 112 and 123, and related ducts are then evacuated, and a gaseous C compd. contg. a halogen atom is introduced into the chamber 123 from a cylinder 109 and decomposed by a microwave plasma generator 22. The decomposition product is introduced into a pipe 116 through pipes 124 and 117, and the inner wall surfaces of the pipes 116 and 124 are treated with plasma. The film forming chamber and the activation chamber are then returned to the atmosphere pressure, a substrate 103 is placed on a holder, the inside of the chamber 101 is evacuated, the substrate 103 is heated by a heater 104, and gaseous H2 is introduced into the chamber 123 from a cylinder 106, activated, and introduced into the chamber 101. Meanwhile, solid Si particles 114 are packed in the chamber 112 and heated by an electric furnace 113, and SiF4 is blown in form a pipe 115 and introduced into the chamber 101 as the active species. |
